PART |
Description |
Maker |
BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa 200V NPN silicon transistot, diffused mesa TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五(巴西)总裁| 6A条一(c)|3 NPN SILICON TRANSISTORS DIFFUSED MESA 180V NPN silicon transistot, diffused mesa
|
Cypress Semiconductor, Corp. List of Unclassifed Manufacturers ETC[ETC] Comset Semiconductors
|
2SD217 |
(2SD217 / 2SD218) NPN SILICON EPITAXIAL MESA TRANSISTOR
|
ETC
|
2SC2484 2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A SILICON EPITAXAL BASE VLESA TRANSISTOR
|
Panasonic Semiconductor
|
1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管) PC 5/10-G-7,62 PCV 5/ 4-G-7,62 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管) From old datasheet system Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
|
BYW56 BYW54 BYW52-TR |
2 A, 200 V, SILICON, RECTIFIER DIODE ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Silicon Mesa Rectifiers
|
Vishay Beyschlag Vishay Siliconix
|
BY527 |
Silicon Mesa Rectifier From old datasheet system
|
Vishay Telefunken VISAY[Vishay Siliconix]
|
BY269 BY268 BY2689 |
From old datasheet system Silicon Mesa Rectifiers
|
Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
BY228 |
SILICON MESA RECTIFIER From old datasheet system
|
Vishay Telefunken Vishay Siliconix
|
2SC2315 2SC2316 |
SILICON NPN TRIPLE DIFFUSED MESA
|
SANKEN[Sanken electric]
|
BY458 BY44858 BY448 |
Silicon Mesa Rectifiers From old datasheet system
|
VISAY[Vishay Siliconix]
|
BYG10 |
Silicon Mesa SMD Rectifier(低反向电流的表面贴装通用整流
|
Vishay Intertechnology,Inc.
|